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Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors

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2 Author(s)
Michetti, P. ; Dipt. di Ing. dell''Inf., Univ. di Pisa, Pisa, Italy ; Iannaccone, G.

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, which cannot be described neither by drift diffusion nor by purely ballistic models. In carbon-based nanotransistors, source and drain contacts are often characterized by the formation of Schottky barriers (SBs), with strong influence on transport. In this paper, we present a model for 1-D field-effect transistors, taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Büttiker's probe approach to dissipative transport, in which a nonballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport and, in particular, of the transition between SB- and dissipation-limited transports.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 7 )