By Topic

1.55- \mu m GaNAsSb-Based Photoconductive Switch for Microwave Switching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Kian Hua Tan ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Tripon-Canseliet, C. ; Faci, S. ; Pagies, A.
more authors

We report a GaNAsSb-based photoconductive switch for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a radio-frequency plasma-assisted nitrogen source and a valved antimony cracker cell. The switch shows a maximum ON-OFF ratio of 9 dB at 1.5 GHz under 1.55-m laser excitation at 80 mW. The switch also shows a positive ON-OFF ratio up to 10 GHz. This is the first successful demonstration of a photoconductive switch for microwave switching application under 1.55- m wavelength excitation. Further analysis suggests that the high contact resistance may degrade the performance of the photoconductive switch.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 15 )