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Frequency tuning of a GaAs semiconductor laser locked to the optogalvanic signal of argon by use of the Zeeman effect

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2 Author(s)
Yamaguchi, S. ; Dept. of Electron. Eng., Tokyo Inst. of Polytech., Kanagawa, Japan ; Suzuki, M.

The frequency of a GaAs semiconductor laser, locked to the optogalvanic signal corresponding to the 4s/sub 11/-4p/sub 12/ transition of Ar, was tuned in the frequency range of +or-1.75 GHz by use of the Zeeman effect. The observed tuning factor of 1.60 MHz/G agreed with that calculated from the g factor in jj-coupling at a weak field case. The frequency-locking was accomplished by using a frequency discriminator obtained by Zeeman modulation.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 5 )

Date of Publication:

May 1990

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