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Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

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5 Author(s)
Aubert, T. ; Institut Jean Lamour, UMR 7198 CNRS-Nancy University, 54506 Vandoeuvre lès Nancy, France ; Elmazria, Omar ; Assouar, B. ; Bouvot, Laurent
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AlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 °C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 °C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film.

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Applied Physics Letters  (Volume:96 ,  Issue: 20 )