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Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C

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10 Author(s)
Teplin, Charles W. ; National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden 80401, Colorado, USA ; Alberi, K. ; Shub, Maxim ; Beall, C.
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We construct a phase diagram for silicon layer growth on (001) Si by hot-wire chemical vapor deposition (HWCVD), for rates from 10 to 150 nm/min and for substrate temperatures from 500 to 800 °C. Our results show that a mixed mono and dihydride surface termination during growth causes polycrystalline growth; some H-free sites are needed for epitaxy. For epitaxial films (T>620 °C), the dislocation density decreases with increasing growth temperature because of reduced O contamination of the surface. The best HWCVD epitaxial layers have dislocation densities of 105 cm-2.

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Applied Physics Letters  (Volume:96 ,  Issue: 20 )