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MOS Voltage Reference based on Polysilicon Gate Work Function Difference

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2 Author(s)
Oguey, H.J. ; Centre Electronique Horloger S.A., Neuchâtel, Switzerland ; Gerber, B.

First Page of the Article

Published in:

Solid State Circuits Conference - ESSCIRC 79, Fifth European

Date of Conference:

18-21 Sept. 1979