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Monolithic Infrared Sensor System with Programmable Readout Electronics

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5 Author(s)
Jahne, R. ; Fraunhofer Institute of Microelectronic Circuits and Systems -IMS2- Dresden, Grenzstr. 28, 01109 Dresden ; Budde, W. ; Gottfried-G, R. ; Kuck, H.
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We report on a fully CMOS compatible infrared sensor with integrated signal amplification electronics. The IR sensor consists of 60 thermocouples of p+ doped silicon and n-doped polysilicon electrically connected in series. Local SOI and an additional step of anisotropic backside etching have been used to achive a good thermal isolation between the hot and the cold junctions of the sensor. The signal amplification electronics has been realized using fully differential switched capacitor design techniques manufactured in a 2¿m n-well CMOS-technology

Published in:

Solid-State Circuits Conference, 1994. ESSCIRC '94. Twentieth European

Date of Conference:

20-22 Sept. 1994