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Soft Errors in Static NMOS RAMs

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2 Author(s)
P. M. Carter ; Department of Electronics and Information Engineering, Southampton University, Southampton, SO9 5NH ; B. R. Wilkins

Soft error rates in static RAMs have been measured, and shown to be comparable to those of DRAMs under typical operating conditions. Ways of reducing the alpha-sensitivity have been assessed both by analysis of a simplified model of the SRAM cell, and by SPICE simulations.

Published in:

Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European

Date of Conference:

16-18 Sept. 1986