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A New On-Chip Voltage Converter for Submicron High-Density DRAMs

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4 Author(s)
Furuyama, T. ; Semiconductor Device Engineering Lab., Toshiba Corp., 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan ; Watanabe, Y. ; Ohsawa, Takashi ; Watanabe, Shigeyoshi

A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.

Published in:

Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European

Date of Conference:

16-18 Sept. 1986