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Monolithic high gain DC to 10 GHz Direct Coupled Feedback Transimpedance Amplifier Using AlGaAs/GaAs HBT's

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4 Author(s)
Baureis, Peter ; Fraunhofer Institute for Integrated Circuits, Dept. ICD, am Wetterkreuz 13, D-8520 Erlangen Federal Republic of Germany. Phone: 9131-776411, FAX: 9131-776499 ; Gottler, Dieter ; Oehler, F. ; Zwicknagl, Peter

A fixed 15.5 dB gain, DC to 10 GHz transimpedance amplifier using AlGaAs / GaAs heterojunction bipolar transistor (HBT) technology is described. A 2 ¿m emitter non self-aligned HBT IC Process (FT ¿ 40 GHz, Fmax ¿ 40 GHz) with MOCVD grown layers is used to fabricate the amplifier. The 1 dB Power compression is measured to be at 4 dBm output power. The third-order intercept point (IP3) is 19 dBm at a DC Power of 156 mW. The compact chip size of 0.45*0.6 mm2 and the excellent 15 Gb/s NRZ pulse response make the amplifier a good candidate for 15 Gb/s optical transmission systems.

Published in:

Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European  (Volume:1 )

Date of Conference:

22-24 Sept. 1993