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This paper describes the architecture and key circuit techniques of a PSRAM using the BiCMOSG3 cell for storage array. The important features of the cell from the circuit techniques point of view are reported. An inverting refresh scheme resulting in a very simple refresh circuitry is proposed. The functional separation between refresh amplifiers and sense amplifiers for selective access operations permits very fast access operations. A 16-kbit test memory was designed as a part of a 1-Mbit PSRAM concept. The delay time in the storage array is 4 ns.