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SiO2(2 nm)/Cr25Pt75(15 nm) and SiO2(2 nm)/Cr25Pt75(15 nm)/SiO2(10, 20 nm)/Co80Zr10Nb10 (10 nm) were prepared by magnetron sputtering method and post-annealed by rapid thermal annealing (RTA) at temperatures of 600Â°C-1000Â°C for 1-60 sec. The saturation magnetization Ms and coercivity Hc measured by applying a maximum field of 18 kOe were 150 emu/cc and 12 kOe, respectively, for the sample after rapid thermal annealing at 1000 Â°C for 30 sec. This means that L12-CrPt3 phase was obtained by RTA process. The RTA process was applied to fabricate the multilayered structure having L12-CrPt3 and CoZrNb soft magnetic underlayer (SUL). The polar Kerr loop of CrPt3(15 nm)/SiO2(20 nm)/CoZrNb(10 nm) after RTA at 1000Â°C for 30 sec exhibited a large coercivity Hc > 9 kOe corresponding to that of the CrPt3 single layer. From the compositional depth profile of CrPt3(15 nm)/SiO2(20 nm)/CoZrNb(10 nm) processed by RTA at 1000Â°C for 30 sec, sharp layered structure was confirmed despite the high-temperature heat treatment. When the SiO2 thickness was reduced to 10 nm, such a layered structure was completely destroyed due to the interdiffusion between CrPt3 and CoZrNb layers. Thus it was concluded that the RTA process and the interlayer of SiO2 (20 nm) were effective to fabricate layered structure having L12-CrPt3 and SUL.