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Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

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2 Author(s)
Kangho Lee ; Adv. Technol., Qualcomm Inc., San Diego, CA, USA ; Kang, S.H.

Commercializing spin-transfer-torque magnetic random access memory (STT-MRAM) requires thorough investigation of magnetic tunnel junctions (MTJs) at temperature corners. In this paper, high-temperature behaviors of MTJs are investigated in conjunction with temperature-dependent transistor characteristics in order to ensure reliable high-temperature operation of STT-MRAM.

Published in:

Magnetics, IEEE Transactions on  (Volume:46 ,  Issue: 6 )

Date of Publication:

June 2010

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