Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

Commercializing spin-transfer-torque magnetic random access memory (STT-MRAM) requires thorough investigation of magnetic tunnel junctions (MTJs) at temperature corners. In this paper, high-temperature behaviors of MTJs are investigated in conjunction with temperature-dependent transistor characteristics in order to ensure reliable high-temperature operation of STT-MRAM.