Referenced Items are not available for this document.
We demonstrate the evidence of electrical spin injection into silicon (Si) using the Fe/MgO tunnel barrier by the following two methods: 1) non-local (NL) four-terminal magnetoresistance (MR) scheme with their respective corresponding ferromagnetic (FM) electrode and 2) Hanle-type spin precession scheme. These results are compatible and in agreement with each other. The spin injection signals in the non-local scheme were observed up to 150 K, and the spin diffusion length (¿N) was estimated to be 2.8 ¿m at 8 K. The experimental data completely matches every detail of the Hanle measurements equation, and spin lifetime (¿) was estimated to be 9.44 ns at 8 K. We will be able to discuss the physical properties of a pure spin current in silicon by this compelling data.
Published in:
Magnetics, IEEE Transactions on
(Volume:46
,
Issue:
6
)
Date of Publication: June 2010
- Page(s):
- 1436 - 1439
- ISSN :
- 0018-9464
- INSPEC Accession Number:
- 11313905
- Digital Object Identifier :
- 10.1109/TMAG.2010.2045347
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 May 2010
- Issue Date :
- June 2010
- Sponsored by :
- IEEE Magnetics Society
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