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Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier

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6 Author(s)
Sasaki, T. ; SQ Res. Center, TDK Corp., Nagano, Japan ; Oikawa, T. ; Suzuki, T. ; Shiraishi, M.
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We demonstrate the evidence of electrical spin injection into silicon (Si) using the Fe/MgO tunnel barrier by the following two methods: 1) non-local (NL) four-terminal magnetoresistance (MR) scheme with their respective corresponding ferromagnetic (FM) electrode and 2) Hanle-type spin precession scheme. These results are compatible and in agreement with each other. The spin injection signals in the non-local scheme were observed up to 150 K, and the spin diffusion length (¿N) was estimated to be 2.8 ¿m at 8 K. The experimental data completely matches every detail of the Hanle measurements equation, and spin lifetime (¿) was estimated to be 9.44 ns at 8 K. We will be able to discuss the physical properties of a pure spin current in silicon by this compelling data.

Published in:

Magnetics, IEEE Transactions on  (Volume:46 ,  Issue: 6 )

Date of Publication:

June 2010

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