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Comparison of Scaling of In-Plane and Perpendicular Spin Transfer Switching Technologies by Micromagnetic Simulation

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6 Author(s)
Apalkov, D. ; Grandis Inc., Milpitas, CA, USA ; Watts, S. ; Driskill-Smith, A. ; Chen, E.
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Spin transfer torque switching-basis of operation of innovative memory technology-STT-RAM (spin transfer torque memory) has been actively studied in the recent years with two prevalent technologies emerging at fast pace: in-plane and perpendicular. The crucial question for future development is which technology provides better scaling to smaller sizes. The present work provides evaluation of scalability of these two approaches based on micromagnetic modeling.

Published in:

Magnetics, IEEE Transactions on  (Volume:46 ,  Issue: 6 )

Date of Publication:

June 2010

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