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Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors

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13 Author(s)
Sharma, G. ; Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada ; Razzari, L. ; Su, F.H. ; Blanchard, F.
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Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors.

Published in:

Photonics Journal, IEEE  (Volume:2 ,  Issue: 4 )