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Implementation of a Monolithic Single Proof-Mass Tri-Axis Accelerometer Using CMOS-MEMS Technique

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4 Author(s)
Chih-Ming Sun ; Institute of NEMS, National Tsing Hua University, Hsinchu, Taiwan ; Ming-Han Tsai ; Yu-Chia Liu ; Weileun Fang

This paper presents a novel single proof-mass tri-axis capacitive type complementary metal oxide semiconductor-microelectromechanical system accelerometer to reduce the footprint of the chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis sensitivity. The tri-axis accelerometer has been successfully implemented using the TSMC 2P4M process and in-house postprocessing. The die size of this accelerometer chip containing the MEMS structure and sensing circuits is 1.78 × 1.38 mm, a reduction of nearly 50% in chip size. Within the measurement range of ~0.8 6G, the tri-axis accelerometer sensitivities (nonlinearity) of each direction are 0.53 mV/G (2.64%) for the X-axis, 0.28 mV/G (3.15%) for the Y-axis, and 0.2 mV/G (3.36%) for the Z-axis, respectively. In addition, the cross-axis sensitivities of these three axes range from 1% to 8.3% for the same measurement range. The noise floors in each direction are 120 mG/rtHz for the X-axis, 271 mG/rtHz for the Y-axis, and 357 mG/rtHz for the Z-axis.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 7 )