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Submicron Etched Beam Splitters Based on Total Internal Reflection in GaAs–AlGaAs Waveguides

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2 Author(s)
Byungchae Kim ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; Dagli, N.

Submicron etched beam splitters are designed, fabricated and characterized in Al0.9Ga0.1As-GaAs waveguides. Beam splitter transmission and reflection characteristics show clear dependence on gap dimension and angle of incidence. It is possible to obtain 8 to 30% power transmission by adjusting the gap dimension and angle of incidence. The experimental results agree well with three-dimensional (3-D) finite difference time domain (FDTD) simulations. The effect of imperfections, mainly the slope of etched sidewalls and variations in etch depth are investigated using 3-D FDTD. Design guidelines for low loss etched beam splitters are also given.

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 13 )

Date of Publication:

July1, 2010

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