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New RF intrinsic parameters extraction procedure for advanced MOS transistors

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4 Author(s)
Tinoco, J.C. ; Dept. de Ing. en Telecomun., Univ. Nac. Autonoma de Mexico, Mexico, Mexico ; Martinez-Lopez, A.G. ; Emam, M. ; Raskin, J.

A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.

Published in:

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Date of Conference:

22-25 March 2010