By Topic

New RF intrinsic parameters extraction procedure for advanced MOS transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tinoco, J.C. ; Dept. de Ing. en Telecomun., Univ. Nac. Autonoma de Mexico, Mexico, Mexico ; Martinez-Lopez, A.G. ; Emam, M. ; Raskin, J.

A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.

Published in:

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Date of Conference:

22-25 March 2010