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Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

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3 Author(s)
Chen, Z.T. ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya, Aichi 466-8555, Japan ; Sakai, Y. ; Egawa, T.

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Temperature-dependent photoluminescence (PL) measurements have been performed on high-quality InAlN layers lattice-matched (LM) to GaN with different thicknesses. It is found that the PL is consisted of two components denoted as IH (high-energy side) and IL (low-energy side), respectively. IH is attributed to exciton luminescence of bulk InAlN with linewidth comparable to those calculated under the assumption of perfect random alloy. While IL is attributed to the emission from the quantum-dotlike structure on the surface of InAlN, revealing the importance of surface effect to the investigations related to InAlN LM to GaN.

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Applied Physics Letters  (Volume:96 ,  Issue: 19 )