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A Differential Sallen-Key Low-Pass Filter in Amorphous-Silicon Technology

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4 Author(s)
Chien-Han Wu ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hsieh-Hung Hsieh ; Po-Chih Ku ; Liang-Hung Lu

In this paper, the design and implementation of a second-order low-pass filter (LPF) utilizing an amorphous-silicon (a-Si) thin-film-transistor (TFT) process technology is presented. In order to boost the gain of the amplifiers, a positive-feedback technique is developed for the design of a differential operational amplifier (OPAMP) and a differential-difference amplifier (DDA). Based on the Sallen-Key filter structure, DDAs with the proposed gain-enhancement technique are employed for the implementation of the LPF such that the chip area and power consumption can be minimized. Using an 8 μm a-Si technology, the DDA and the LPF are realized for demonstration. Consuming a dc power of 9.5 mW from a 25-V supply, the fabricated LPF exhibits a 3-dB bandwidth of 0.3 Hz. For an input frequency of 0.3 Hz, the measured THD and SFDR are and 23.76 dB, respectively.

Published in:

Display Technology, Journal of  (Volume:6 ,  Issue: 6 )

Date of Publication:

June 2010

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