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Performance Improvement of AlN–GaN-Based Intersubband Detectors by Using Quantum Dots

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6 Author(s)
Hofstetter, Daniel ; Inst. of Phys., Univ. of Neuchatel, Neuchatel, Switzerland ; Di Francesco, Joab ; Kandaswamy, P.K. ; Das, A.
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We report a strong performance improvement for 1.55-μm AIN-GaN-based intersubband photodetectors. Thanks to the use of quantum dots (QDs) instead of quantum wells (QWs), a factor of 60 could be gained in terms of maximum responsivity. In addition, this performance was achieved at a considerably higher temperature of 160 K instead of 80 K as typically seen for QWs. The responsivity of these photodetectors, which are based on optical rectification, is strongly influenced by their excited state lifetime. We believe that a much longer electron lifetime in the upper QD states and an increased lateral electron displacement are responsible for the observed improvement.

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Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 15 )