Cart (Loading....) | Create Account
Close category search window
 

Effect of Floating-Gate Polysilicon Depletion on the Erase Efficiency of nand Flash Memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Spessot, Alessio ; R&D-Technol. Dev., Agrate Brianza, Italy ; Monzio Compagnoni, C. ; Farina, F. ; Calderoni, A.
more authors

This letter presents a detailed experimental investigation of the erase transients of decananometer NAND Flash memories, showing a drop and then a recovery of the erase efficiency as the erase bias is increased. The modulation of the erase efficiency is studied as a function of the erase time, temperature, and the number of applied pulses: Longer erase times or higher temperatures are shown to reduce the efficiency drop, while this is enhanced when the erase pulse is split into a sequence of short pulses. Experimental evidences are explained as a result of the deep-depletion condition that exists in the floating-gate polysilicon for moderate erase biases and short erase times, reducing the electric field in the tunnel oxide and the electron-tunneling current discharging the floating gate.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 7 )

Date of Publication:

July 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.