By Topic

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Huang, Hsin-Hung ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan ; Wen-Chieh Shih ; Lai, Chih-Huang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3429024 

Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 19 )