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Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

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3 Author(s)
Huang, Hsin-Hung ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan ; Wen-Chieh Shih ; Lai, Chih-Huang

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Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 19 )