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Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

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7 Author(s)
Amma, Shin-ichi ; Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan ; Tokumoto, Yuki ; Edagawa, Keiichi ; Shibata, N.
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Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel–Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

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Applied Physics Letters  (Volume:96 ,  Issue: 19 )