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Optical and microstructural properties versus indium content in InxGa1-xN films grown by metal organic chemical vapor deposition

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9 Author(s)
Gokarna, A. ; Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincaré, 59652 Villeneuve d''Ascq, Cedex, France ; Gauthier-Brun, A. ; Liu, W. ; Androussi, Y.
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We present comparative investigations of single phase InxGa1-xN alloys for a varying In content (x=0.07 to 0.14) grown by metal organic chemical vapor deposition (MOCVD) technique. While the composition was determined using secondary ion mass spectroscopy, we have investigated the microstructures in InxGa1-xN/GaN films by using transmission electron microscopy and correlated these with the refractive index of the material. Based on ellipsometric analysis of the films, the dispersion of optical indices for InxGa1-xN films is determined by using Tauc–Lorentz dispersion equations.

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Applied Physics Letters  (Volume:96 ,  Issue: 19 )