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Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

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3 Author(s)
Kasai, Seiya ; Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Sapporo 060-0814, Japan ; Miura, Kensuke ; Shiratori, Yuta

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Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network’s response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 19 )

Date of Publication: May 2010

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