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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:19 Help

The effect of traps on the performance of graphene field-effect transistors

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3 Author(s)
Zhu, J. ; Department of Electrical Engineering, University of California–Los Angeles, Los Angeles, California 90095-1594, USA ; Jhaveri, R. ; Woo, J.C.S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3428785 

This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 19 )

Date of Publication: May 2010

Page(s):
193503 - 193503-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3428785
Product Type:
Journals & Magazines
Date of Current Version :
13 May 2010
Issue Date :
May 2010

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