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Thermal shot noise in top-gated single carbon nanotube field effect transistors

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8 Author(s)
Chaste, J. ; Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, 24, rue Lhomond, 75231 Paris Cedex 05, France ; Pallecchi, E. ; Morfin, P. ; Feve, G.
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The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of

13 μe/
in the 0.2–0.8 GHz band.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 19 )