By Topic

GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Julien LeClecH ; 3S PHOTONICS, Route de Villejust, F-91625 Nozay Cedex - France ; Daniel T. Cassidy ; Michel Biet ; Fran├žois Laruelle
more authors

GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.

Published in:

Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on

Date of Conference:

26-28 April 2010