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\hbox {1}/f Noise of Silicon Nanowire BioFETs

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4 Author(s)
Rajan, N.K. ; Yale Univ., New Haven, CT, USA ; Routenberg, D.A. ; Chen, Jin ; Reed, Mark A.

The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10-3) is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

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