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GaN Power Transistors on Si Substrates for Switching Applications

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7 Author(s)
Ikeda, N. ; Yokohama R&D Labs., Furukawa Electr. Co., Ltd., Yokohama, Japan ; Niiyama, Y. ; Kambayashi, H. ; Sato, Y.
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In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).

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Proceedings of the IEEE  (Volume:98 ,  Issue: 7 )