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We present the results of an experimental study of dimensional ratios dependencies on the performance of a ballistic deflection transistor (BDT) operating in a quasi-ballistic regime. Experimental transconductance change based on geometry variations is studied for smaller and larger devices with channel width of 300 and 500 nm, respectively. Transconductance variation for a series of drain biases is also observed for a specific geometry and dimension. By means of Monte Carlo modeling we report the effect of different geometry parameters on the transfer characteristics of BDTs. The strength of the gate control in the InGaAs channel is analyzed.