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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:18 Help

Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

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8 Author(s)
Cho, Chu-Young ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Kang, Se-Eun ; Kim, Ki Seok ; Lee, Sang-Jun
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We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO2 nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO2/p-GaN PC layer on p-GaN.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 18 )

Date of Publication: May 2010

Page(s):
181110 - 181110-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3427352
Product Type:
Journals & Magazines
Date of Current Version :
13 May 2010
Issue Date :
May 2010

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