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Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001)

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9 Author(s)
Cheng, J. ; Institut des Nanotechnologies de Lyon INL-UMR5270/CNRS, Ecole Centrale de Lyon, Université de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France ; Chettaoui, A. ; Penuelas, J. ; Gobaut, B.
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A study of epitaxial growth of GaAs islands on (2×1) reconstructed SrTiO3(001) surface is presented. Under low arsenic partial pressures (PAs), GaAs islands are (001)-oriented, and increasing PAs leads to the progressive formation of (111)-oriented GaAs islands. This results from the competition between the formation of Ga–O and Ga–As bonds at the early stages of the growth, as supported by the analysis of the evolution of the island density with respect to PAs.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 9 )