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Modeling the bias and scaling dependence of drain current fluctuations due to single carrier trapping in submicron MOSFET's

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4 Author(s)
Martin, S.T. ; Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA ; Li, G.P. ; Worley, E. ; White, J.

A new effective field formulation for the amplitude of RTS transitions in submicron MOSFETs is presented and supported through experimental measurements. Localized fluctuations in flat-band voltage (V/sub FB/) due to the presence of oxide charge during the trap charged state cause variations in threshold (V/sub T/) and mobility /spl mu/. Using standard techniques, the shifts in V/sub T/ and /spl mu/ are extracted from RTS amplitudes and the device transfer characteristics measured in the linear operating mode. It is found that both V/sub T/ and /spl mu/ increase during the trap charged state and that these increases accurately model the drain current bias dependence.

Published in:

Device Research Conference, 1996. Digest. 54th Annual

Date of Conference:

26-26 June 1996