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A new effective field formulation for the amplitude of RTS transitions in submicron MOSFETs is presented and supported through experimental measurements. Localized fluctuations in flat-band voltage (V/sub FB/) due to the presence of oxide charge during the trap charged state cause variations in threshold (V/sub T/) and mobility /spl mu/. Using standard techniques, the shifts in V/sub T/ and /spl mu/ are extracted from RTS amplitudes and the device transfer characteristics measured in the linear operating mode. It is found that both V/sub T/ and /spl mu/ increase during the trap charged state and that these increases accurately model the drain current bias dependence.
Device Research Conference, 1996. Digest. 54th Annual
Date of Conference: 26-26 June 1996