By Topic

Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Takamura, Y. ; Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8503, Japan ; Nakane, R. ; Sugahara, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3350914 

The authors developed a new analysis technique for atomic disorder structures in full-Heusler alloys using x-ray diffraction (XRD) with Co Kα and Cu Kα sources. The technique can quantitatively evaluate all the atomic disorders for the exchanges between X, Y, and Z atoms in full-Heusler X2YZ alloys. In particular, the technique can treat the DO3 disorder that cannot be analyzed by ordinary Cu Kα XRD. By applying this technique to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing (RTA), RTA-temperature (TA) dependence of the atomic disorders was revealed. The site occupancies of Co, Fe, and Si atoms on their original sites were 98%, 90%, and 93%, respectively, for the film formed at TA=800 °C, indicating that the RTA-formed Co2FeSi film had the L21 structure with the extremely high degree of ordering.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 9 )