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Effect of annealing on the magnetic tunnel junction with Co/Pt perpendicular anisotropy ferromagnetic multilayers

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6 Author(s)
Wang, Yi. ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190, China ; Wang, W.X. ; Wei, H.X. ; Zhang, B.S.
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Perpendicular magnetic tunnel junctions (pMTJs) with tunneling magnetoresistance (TMR) as high as 14.7% at room temperature were fabricated. The continuous film and pMTJs with Co/Pt multilayer magnetic electrodes and AlOx tunnel barrier were annealed at different temperatures and the effect of annealing on their properties was investigated. The hysteresis loops and X-ray reflectivity measurement show that the interdiffusion of Co and Pt atoms is slight when annealed below 523 K. However, the patterned magnetic tunnel junction gets TMR ratio from 12.3% to the maximum value of 14.7% after annealing at 483 K for 1 h.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 9 )