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Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

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7 Author(s)
Caironi, M. ; Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom ; Newman, C. ; Moore, J.R. ; Natali, D.
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We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5-(2,2-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/Vs when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

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Applied Physics Letters  (Volume:96 ,  Issue: 18 )