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A technique to electrically pump photonic crystal nanocavities using a lateral p-i-n junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.
Published in:
Applied Physics Letters
(Volume:96
,
Issue:
18
)
Date of Publication: May 2010
- Page(s):
- 181103 - 181103-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3425663
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 May 2010
- Issue Date :
- May 2010
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