By Topic

Compact Modeling of a Magnetic Tunnel Junction—Part I: Dynamic Magnetization Model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kammerer, J. ; Centre Nat. de Recherches Scientifiques, Univ. de Strasbourg, Strasbourg, France ; Madec, M. ; Hébrard, L.

The potential application range of spintronic devices is wide. However, few works were carried out in the field of compact modeling of such devices. The lack of compact models dramatically increases the design complexity of circuits using spintronic devices. In this paper, focus is made on magnetic tunnel junctions (MTJs). It is presented in a set of two papers: the first part deals with the magnetic aspects of the MTJ, whereas the second one covers the electrical aspects. In this part, a dynamic magnetization model inspired from the micromagnetic formalism is presented. This vectorial model is able to describe the quiescent state, as well as the transient behavior of the magnetization vector of an anisotropic single-domain element. The dynamic magnetization model is implemented in VHDL-AMS and requires only eight parameters. Simulation results are also presented and compared with theoretical ones.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 6 )