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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:22 Issue:14 Help

Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- \mu m InAs–GaAs QD Lasers With Different p -Doping Levels

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6 Author(s)
Rui Wang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Soon Fatt Yoon ; Han Xue Zhao ; Cun Zhu Tong
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The modal gain and differential gain of 1.3-μm InAs-GaAs quantum-dot (QD) lasers with different doping concentrations have been investigated as a function of injection current under different operation temperatures from 20°C to 120°C. The results show that QD laser with light doping density can improve the characteristic temperature (To), modal gain, and differential gain and reduce the threshold current density.

Published in:
Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 14 )

Date of Publication: July15, 2010

Page(s):
1045 - 1047
ISSN :
1041-1135
INSPEC Accession Number:
11400272
Digital Object Identifier :
10.1109/LPT.2010.2049485
Product Type:
Journals & Magazines
Date of Publication :
06 May 2010
Date of Current Version :
24 June 2010
Issue Date :
July15, 2010
Sponsored by :
IEEE Photonics Society

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