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Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- \mu m InAs–GaAs QD Lasers With Different p -Doping Levels

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6 Author(s)
Rui Wang ; School of Electrical and Electronic Engineering, Nanyang Technological University, Republic of Singapore ; Soon Fatt Yoon ; Han Xue Zhao ; Cun Zhu Tong
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The modal gain and differential gain of 1.3-μm InAs-GaAs quantum-dot (QD) lasers with different doping concentrations have been investigated as a function of injection current under different operation temperatures from 20°C to 120°C. The results show that QD laser with light doping density can improve the characteristic temperature (To), modal gain, and differential gain and reduce the threshold current density.

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IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 14 )