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Variability Analysis of TiN Metal-Gate FinFETs

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9 Author(s)
Kazuhiko Endo ; National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan ; Shin-ichi O'uchi ; Yuki Ishikawa ; Yongxun Liu
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Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 6 )