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A 12-kV High-Voltage Semiconductor Switch Based on 76-mm Reverse-Switching Dynistors

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6 Author(s)
Xiaoping He ; Northwest Institute of Nuclear Technology (NINT), Xi'an, China ; Haiyang Wang ; Binjie Xue ; Weiqing Chen
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This paper describes the construction and experimental tests of a 12-kV high-voltage high-action generator based on reverse-switching dynistor (RSD) assembly. The main RSD unit consists of seven 76-mm-diameter dynistor pieces connected in series with a blocking voltage of about 2.4 kV, a magnetic switch based on a 1K101 amorphous alloy core, the trigger system based on a saturable transformer, and a 16-mm RSD assembly; the trigger current could reach 2 kA in amplitude with 1-μs duration under 10 kV. The working voltage rate of this RSD unit is about 8-12 kV. Experiment on a 2.2-mF capacitor test bed under 12 kV working voltage, the switch current amplitude reached 150 kA with 300-μs duration; the transferred charge is about 26.5 C and the action is 2.94 MA2s, respectively.

Published in:

IEEE Transactions on Plasma Science  (Volume:39 ,  Issue: 1 )