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A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide (SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055 A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn- off states were τON = 12.72 ms and τOFF = 447.66 ms , respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the 1/f noise. Besides, the noise equivalent power and normalized detectivity (D*) of the ZnO NW photodetector were 2.32 ×10-9 W and 7.43 ×109 cm·Hz0.5·W-1, respectively.
Selected Topics in Quantum Electronics, IEEE Journal of (Volume:17 , Issue: 4 )
Date of Publication: July-Aug. 2011