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An original method is presented to improve DC electrical performance of AIGaAs/lnGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain-source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2 ?? 1010 neutrons/cm2.