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DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

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6 Author(s)
Y. Guhel ; EIC - LUSAC, Universite de Caen Basse-Normandie, Site Universitaire ; B. Boudart ; C. Gaquiere ; N. Vellas
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An original method is presented to improve DC electrical performance of AIGaAs/lnGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain-source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2 ?? 1010 neutrons/cm2.

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Electronics Letters  (Volume:46 ,  Issue: 9 )