Effect of proton energy on damage generation in irradiated silicon

Czochralski- and float-zone- grown silicon detectors were irradiated with 2 to 5 MeV protons. Capacitance-voltage (CV) measurements served to deduce the effective doping profiles and current-voltage (IV) measurements served to obtaining information on irradiation-induced deep levels. The CV measurements show that the proton-induced net space charge is positive or negative depending on the energy of the bombarding ion. The commonly employed nonionizing energy loss hypothesis was tested with the low energy proton regime and prominent previously unobserved deviations from predictions were noted.