Cart (Loading....) | Create Account
Close category search window
 

Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Gun Hee Kim ; School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea ; Woong Hee Jeong ; Du Ahn, Byung ; Shin, Hyun Soo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3413939 

We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 16 )

Date of Publication:

Apr 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.