Cart (Loading....) | Create Account
Close category search window
 

The Semi-Superjunction IGBT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Antoniou, M. ; Dept. of Electr. Eng., Univ. of Cambridge, Cambridge, UK ; Udrea, F. ; Bauer, F. ; Nistor, I.

In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT). Furthermore, when compared with a full SJ IGBT, the device has a considerably simpler process of manufacturing as the existing fabrication process for the “CoolMOS” could be used. The Semi-SJ IGBT offers better robustness against cosmic rays compared with an FS IGBT; the failure-in-time per surface area (FIT/A) of the device levels are up to two orders of magnitude lower. Alternatively, by changing the structure parameters, one can improve dramatically the on state versus switching tradeoff while maintaining the same FIT/A levels.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.